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| Semiconductor STC128 NPN Silicon Transistor Features * * * * * Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6(Max.) (IB=1mA) Ordering Information Type NO. STC128 Marking STC128 Package Code TO-92 Outline Dimensions unit : mm 3.450.1 4.50.1 2.250.1 4.50.1 0.40.02 2.060.1 14.00.40 1.27 Typ. 2.54 Typ. 123 PIN Connections 1. Emitter 2. Collector 3. Base 1.200.1 0.38 KST-9050-002 1 STC128 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 15 6.5 1 625 150 -55~150 Unit V V V A mW C C Electrical Characteristics Characteristic Collector-base breakdown voltage Collector-Emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistor frequency Collector output capacitance On resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob RON Test Condition IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=20V, IE=0 VEB=6V, IC=0 VCE=1V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=50mA VCB=10V, IE=0, f=1MHz f=1KHz, IB=1mA, VIN=0.3V Min. Typ. Max. 20 15 6.5 150 0.1 260 5 0.6 0.1 0.1 0.3 - Unit V V V A A V MHz pF KST-9050-002 2 STC128 Electrical Characteristic Curves Fig. 1 VCE(sat)-IC Fig. 1 COb-VCB Fig. 3 hFE-IC Fig. 4 RON-IB KST-9050-002 3 |
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